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                      PMEG3002AEL_2 ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 15 January 2010 3 of 8 NXP Semiconductors PMEG3002AEL 0.2 A very low VF MEGA Schottky barrier rectifier [1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and I F(AV) rating will be av ailable on request. 6. Thermal characteristics [1] Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. [2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be av ailable on request. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] 500 K/W Table 7. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF continuous forward voltage see Figure 1; IF = 0.1 mA - 125 190 mV IF = 1 mA - 185 250 mV IF = 10 mA - 250 300 mV IF = 100 mA - 350 400 mV IF = 200 mA - 420 480 mV IR continuous reverse current see Figure 2; [1] VR =10V - 2.5 10 μA VR=30V - 10 50 μA Cd diode capacitance VR =1V; f=1MHz; see Figure 3 -1725pF |